050-7126 rev a 4-2004 apt1001r6bfll_sfll typical performance curves maximum ratings all ratings: t c = 25c unless otherwise specified. g d s apt website - http://www.advancedpower.com to-247 d 3 pak power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package fast recovery body diode power mos 7 r fredfet apt1001r6bfll apt1001r6sfll 1000v 8a 1.60 ?? ?? ? characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 4a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1000 1.600 250 1000 100 35 apt1001r6bfll_sfll 1000 8 32 3040 266 2.13 -55 to 150 300 4 16 425 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. downloaded from: http:///
apt1001r6bfll_sfll 050-7126 rev a 4-2004 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse dynamic characteristics z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.500.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -8a) peak diode recovery dv / dt 5 reverse recovery time(i s = -8a, di / dt = 100a/s) reverse recovery charge(i s = -8a, di / dt = 100a/s) peak recovery current(i s = -8a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 8 32 1.3 18 t j = 25c 250 t j = 125c 515 t j = 25c 0.50 t j = 125c 1.1 t j = 25c 8.3 t j = 125c 11.5 symbol r jc r ja min typ max 0.47 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 8a @ 25c resistive switching v gs = 15v v dd = 500v i d = 8a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 667v v gs = 15v i d = 8a, r g = 5 ? inductive switching @ 125c v dd = 667v v gs = 15v i d = 8a, r g = 5 ? min typ max 1320 230 4255 7 3518 18 32 19 210 40 450 50 unit pf nc ns j 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 13.28mh, r g = 25 ? , peak i l = 8a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s i d - 8a di / dt 700a/s v r 1000 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. downloaded from: http:///
050-7126 rev a 4-2004 apt1001r6bfll_sfll typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 5.5v 6v 7v 5v v gs =15,10 & 7.5v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 6.5v 0 5 10 15 20 25 30 012345678 0246810121416 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 1816 14 12 10 86 4 2 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, lo w voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 2018 16 14 12 10 86 4 2 0 8 7 6 5 4 3 2 1 0 2.52.0 1.5 1.0 0.5 0.0 i d = 4a v gs = 10v normalized to v gs = 10v 4a 0.2050.264 0.00544f0.0981f power (watts) rc model junction temp. ( c) case temperature downloaded from: http:///
apt1001r6bfll_sfll 050-7126 rev a 4-2004 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 0.3 0.5 0.7 0.9 1.1 1.3 1.5 3310 51 .5.1 1612 84 0 10ms 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds =500v v ds =200v v ds =800v i d = 8a t j =+150c t j =+25c c rss c iss c oss 5,0001,000 100 10 200100 10 1 i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 667v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 667v r g = 5 ? t j = 125c l = 100h 4 6 8 10 12 14 4 6 8 10 12 14 4 6 8 10 12 14 0 5 101520253035404550 v dd = 667v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 4035 30 25 20 15 10 50 800600 400 200 0 v dd = 667v i d = 8a t j = 125c l = 100h e on includes diode reverse recovery. 4035 30 25 20 15 10 50 500400 300 200 100 0 downloaded from: http:///
050-7126 rev a 4-2004 apt1001r6bfll_sfll typical performance curves apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. 15.49 (.610)16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df100 v ce fi g ure 20 , inductive switchin g test circuit v dd g drain current drain voltage switching energy 90% 5% t r 5% 10% gate voltage 10% t d(on) t j 125c switching energy drain current drain voltage gate voltage t j 125c 10% t d(off) 90% t f 90% 0 downloaded from: http:///
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